•  English
    • Persian
    • English
  •   Login
  • Ferdowsi University of Mashhad
  • |
  • Information Center and Central Library
    • Persian
    • English
  • Home
  • Source Types
    • Journal Paper
    • Ebook
    • Conference Paper
    • Standard
    • Protocol
    • Thesis
  • Use Help
View Item 
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  • All Fields
  • Title
  • Author
  • Year
  • Publisher
  • Subject
  • Publication Title
  • ISSN
  • DOI
  • ISBN
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Classification of Texture Using Gray Level Co-occurrence Matrix and Self-Organizing Map

Author:
Thakare, V.S. , Patil, N.N.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/ICGCCEE.2014.6922240
URI: https://libsearch.um.ac.ir:443/fum/handle/fum/980424
Keyword(s): CMOS integrated circuits,buried layers,integrated circuit modelling,leakage currents,low-power electronics,TCAD simulation,buried oxide,channel length variation,leakage current reduction,low power UTBB FDSOI CMOS device,subthreshold slope,threshold voltage,CMOS integrated circuits,Capacitance,Logic gates,MOS devices,Semiconductor device modeling,Substrates,Threshold voltage,Channel Length,Fully Depleted (FD),Silicon on Insulator (SOI),Simulation,Sub-threshold slope,Thresh
Collections :
  • Latin Articles
  • Show Full MetaData Hide Full MetaData
  • Statistics

    Classification of Texture Using Gray Level Co-occurrence Matrix and Self-Organizing Map

Show full item record

contributor authorThakare, V.S. , Patil, N.N.
date accessioned2020-03-12T19:31:11Z
date available2020-03-12T19:31:11Z
date issued2014
identifier other6745402.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/980424
formatgeneral
languageEnglish
publisherIEEE
titleClassification of Texture Using Gray Level Co-occurrence Matrix and Self-Organizing Map
typeConference Paper
contenttypeMetadata Only
identifier padid8094740
subject keywordsCMOS integrated circuits
subject keywordsburied layers
subject keywordsintegrated circuit modelling
subject keywordsleakage currents
subject keywordslow-power electronics
subject keywordsTCAD simulation
subject keywordsburied oxide
subject keywordschannel length variation
subject keywordsleakage current reduction
subject keywordslow power UTBB FDSOI CMOS device
subject keywordssubthreshold slope
subject keywordsthreshold voltage
subject keywordsCMOS integrated circuits
subject keywordsCapacitance
subject keywordsLogic gates
subject keywordsMOS devices
subject keywordsSemiconductor device modeling
subject keywordsSubstrates
subject keywordsThreshold voltage
subject keywordsChannel Length
subject keywordsFully Depleted (FD)
subject keywordsSilicon on Insulator (SOI)
subject keywordsSimulation
subject keywordsSub-threshold slope
subject keywordsThresh
identifier doi10.1109/ICGCCEE.2014.6922240
journal titlelectronic Systems, Signal Processing and Computing Technologies (ICESC), 2014 International Conferen
filesize215468
citations0
  • About Us
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
DSpace software copyright © 2019-2022  DuraSpace