Classification of Texture Using Gray Level Co-occurrence Matrix and Self-Organizing Map
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: 2014شناسه الکترونیک: 10.1109/ICGCCEE.2014.6922240
کلیدواژه(گان): CMOS integrated circuits,buried layers,integrated circuit modelling,leakage currents,low-power electronics,TCAD simulation,buried oxide,channel length variation,leakage current reduction,low power UTBB FDSOI CMOS device,subthreshold slope,threshold voltage,CMOS integrated circuits,Capacitance,Logic gates,MOS devices,Semiconductor device modeling,Substrates,Threshold voltage,Channel Length,Fully Depleted (FD),Silicon on Insulator (SOI),Simulation,Sub-threshold slope,Thresh
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Classification of Texture Using Gray Level Co-occurrence Matrix and Self-Organizing Map
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contributor author | Thakare, V.S. , Patil, N.N. | |
date accessioned | 2020-03-12T19:31:11Z | |
date available | 2020-03-12T19:31:11Z | |
date issued | 2014 | |
identifier other | 6745402.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/980424 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Classification of Texture Using Gray Level Co-occurrence Matrix and Self-Organizing Map | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8094740 | |
subject keywords | CMOS integrated circuits | |
subject keywords | buried layers | |
subject keywords | integrated circuit modelling | |
subject keywords | leakage currents | |
subject keywords | low-power electronics | |
subject keywords | TCAD simulation | |
subject keywords | buried oxide | |
subject keywords | channel length variation | |
subject keywords | leakage current reduction | |
subject keywords | low power UTBB FDSOI CMOS device | |
subject keywords | subthreshold slope | |
subject keywords | threshold voltage | |
subject keywords | CMOS integrated circuits | |
subject keywords | Capacitance | |
subject keywords | Logic gates | |
subject keywords | MOS devices | |
subject keywords | Semiconductor device modeling | |
subject keywords | Substrates | |
subject keywords | Threshold voltage | |
subject keywords | Channel Length | |
subject keywords | Fully Depleted (FD) | |
subject keywords | Silicon on Insulator (SOI) | |
subject keywords | Simulation | |
subject keywords | Sub-threshold slope | |
subject keywords | Thresh | |
identifier doi | 10.1109/ICGCCEE.2014.6922240 | |
journal title | lectronic Systems, Signal Processing and Computing Technologies (ICESC), 2014 International Conferen | |
filesize | 215468 | |
citations | 0 |