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contributor authorFisher, Craig /A/.
contributor authorJennings, Michael R.
contributor authorSharma, Yogesh K.
contributor authorHamilton, Dean P.
contributor authorGammon, P.M.
contributor authorPerez-Tomas, Amador
contributor authorThomas, Stephen M.
contributor authorBurrows, Susan E.
contributor authorMawby, P.A.
date accessioned2020-03-13T00:14:16Z
date available2020-03-13T00:14:16Z
date issued2014
identifier issn0894-6507
identifier other6857419.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1139305?show=full
formatgeneral
languageEnglish
publisherIEEE
titleImproved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
typeJournal Paper
contenttypeMetadata Only
identifier padid8321514
subject keywordsannealing
subject keywordscarrier lifetime
subject keywordsoxidation
subject keywordsp-i-n diodes
subject keywordssilicon compounds
subject keywordswide band gap semiconductors
subject keywordsSiC
subject keywordsannealing process
subject keywordscarrier lifetime
subject keywordsforward current-voltage characterization
subject keywordshigh temperature oxidation
subject keywordshigh voltage 4H-SiC bipolar devices
subject keywordsmesa-isolated epitaxial-anode 4H-SiC PiN diodes
subject keywordssize 110 mum
subject keywordstemperature 1550 degC
subject keywordsAnnealing
subject keywordsAnodes
subject keywordsCharge carrier lifetime
subject keywordsMaterials
subject keywordsOxidation
subject keywordsPIN photodiodes
subject keywordsTemperature measurement
subject keywords4H-SiC
subject keywordsPiN diode
subject keywordscarrier lifetime
subject keywordshigh temperature
identifier doi10.1109/TSM.2014.2336701
journal titleSemiconductor Manufacturing, IEEE Transactions on
journal volume27
journal issue3
filesize2123737
citations0


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