Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

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Publisher:

IEEE

Year

: 2014

DOI: 10.1109/TSM.2014.2336701

URI: https://libsearch.um.ac.ir:443/fum/handle/fum/1139305

Keyword(s): annealing,carrier lifetime,oxidation,p-i-n diodes,silicon compounds,wide band gap semiconductors,SiC,annealing process,carrier lifetime,forward current-voltage characterization,high temperature oxidation,high voltage 4H-SiC bipolar devices,mesa-isolated epitaxial-anode 4H-SiC PiN diodes,size 110 mum,temperature 1550 degC,Annealing,Anodes,Charge carrier lifetime,Materials,Oxidation,PIN photodiodes,Temperature measurement,4H-SiC,PiN diode,carrier lifetime,high temperature

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Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

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contributor author	Fisher, Craig /A/.
contributor author	Jennings, Michael R.
contributor author	Sharma, Yogesh K.
contributor author	Hamilton, Dean P.
contributor author	Gammon, P.M.
contributor author	Perez-Tomas, Amador
contributor author	Thomas, Stephen M.
contributor author	Burrows, Susan E.
contributor author	Mawby, P.A.
date accessioned	2020-03-13T00:14:16Z
date available	2020-03-13T00:14:16Z
date issued	2014
identifier issn	0894-6507
identifier other	6857419.pdf
identifier uri	https://libsearch.um.ac.ir:443/fum/handle/fum/1139305?locale-attribute=en
format	general
language	English
publisher	IEEE
title	Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
type	Journal Paper
contenttype	Metadata Only
identifier padid	8321514
subject keywords	annealing
subject keywords	carrier lifetime
subject keywords	oxidation
subject keywords	p-i-n diodes
subject keywords	silicon compounds
subject keywords	wide band gap semiconductors
subject keywords	SiC
subject keywords	annealing process
subject keywords	carrier lifetime
subject keywords	forward current-voltage characterization
subject keywords	high temperature oxidation
subject keywords	high voltage 4H-SiC bipolar devices
subject keywords	mesa-isolated epitaxial-anode 4H-SiC PiN diodes
subject keywords	size 110 mum
subject keywords	temperature 1550 degC
subject keywords	Annealing
subject keywords	Anodes
subject keywords	Charge carrier lifetime
subject keywords	Materials
subject keywords	Oxidation
subject keywords	PIN photodiodes
subject keywords	Temperature measurement
subject keywords	4H-SiC
subject keywords	PiN diode
subject keywords	carrier lifetime
subject keywords	high temperature
identifier doi	10.1109/TSM.2014.2336701
journal title	Semiconductor Manufacturing, IEEE Transactions on
journal volume	27
journal issue	3
filesize	2123737
citations	0