Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
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سال
: 2014شناسه الکترونیک: 10.1109/TSM.2014.2336701
کلیدواژه(گان): annealing,carrier lifetime,oxidation,p-i-n diodes,silicon compounds,wide band gap semiconductors,SiC,annealing process,carrier lifetime,forward current-voltage characterization,high temperature oxidation,high voltage 4H-SiC bipolar devices,mesa-isolated epitaxial-anode 4H-SiC PiN diodes,size 110 mum,temperature 1550 degC,Annealing,Anodes,Charge carrier lifetime,Materials,Oxidation,PIN photodiodes,Temperature measurement,4H-SiC,PiN diode,carrier lifetime,high temperature
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Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process
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| contributor author | Fisher, Craig /A/. | |
| contributor author | Jennings, Michael R. | |
| contributor author | Sharma, Yogesh K. | |
| contributor author | Hamilton, Dean P. | |
| contributor author | Gammon, P.M. | |
| contributor author | Perez-Tomas, Amador | |
| contributor author | Thomas, Stephen M. | |
| contributor author | Burrows, Susan E. | |
| contributor author | Mawby, P.A. | |
| date accessioned | 2020-03-13T00:14:16Z | |
| date available | 2020-03-13T00:14:16Z | |
| date issued | 2014 | |
| identifier issn | 0894-6507 | |
| identifier other | 6857419.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1139305?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8321514 | |
| subject keywords | annealing | |
| subject keywords | carrier lifetime | |
| subject keywords | oxidation | |
| subject keywords | p-i-n diodes | |
| subject keywords | silicon compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | SiC | |
| subject keywords | annealing process | |
| subject keywords | carrier lifetime | |
| subject keywords | forward current-voltage characterization | |
| subject keywords | high temperature oxidation | |
| subject keywords | high voltage 4H-SiC bipolar devices | |
| subject keywords | mesa-isolated epitaxial-anode 4H-SiC PiN diodes | |
| subject keywords | size 110 mum | |
| subject keywords | temperature 1550 degC | |
| subject keywords | Annealing | |
| subject keywords | Anodes | |
| subject keywords | Charge carrier lifetime | |
| subject keywords | Materials | |
| subject keywords | Oxidation | |
| subject keywords | PIN photodiodes | |
| subject keywords | Temperature measurement | |
| subject keywords | 4H-SiC | |
| subject keywords | PiN diode | |
| subject keywords | carrier lifetime | |
| subject keywords | high temperature | |
| identifier doi | 10.1109/TSM.2014.2336701 | |
| journal title | Semiconductor Manufacturing, IEEE Transactions on | |
| journal volume | 27 | |
| journal issue | 3 | |
| filesize | 2123737 | |
| citations | 0 |