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Characterization and Modeling of Breakdown Probability in Sub-Micrometer CMOS SPADs

contributor authorPancheri, Lucio
contributor authorStoppa, David
contributor authorDalla Betta, Gian-Franco
date accessioned2020-03-13T00:11:50Z
date available2020-03-13T00:11:50Z
date issued2014
identifier issn1077-260X
identifier other6847145.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1137858?show=full
formatgeneral
languageEnglish
publisherIEEE
titleCharacterization and Modeling of Breakdown Probability in Sub-Micrometer CMOS SPADs
typeJournal Paper
contenttypeMetadata Only
identifier padid8319834
subject keywordsCMOS integrated circuits
subject keywordsavalanche photodiodes
subject keywordselectric breakdown
subject keywordsintegrated optoelectronics
subject keywordsbreakdown probability
subject keywordsbreakdown voltage
subject keywordsdead-space models
subject keywordslocal model
subject keywordsp+/nwell abrupt junction
subject keywordspwell/n-iso diffused junction
subject keywordssingle-photon avalanche diodes
subject keywordssize 0.15 mum
subject keywordssubmicrometer CMOS SPAD
subject keywordsCharge carrier processes
subject keywordsElectric breakdown
subject keywordsElectric fields
subject keywordsIonization
subject keywordsJunctions
subject keywordsSemiconductor device modeling
subject keywordsSemiconductor process modeling
subject keywordsSingle-photon avalanche diode (SPAD)
subject keywordsavalanche bre
identifier doi10.1109/JSTQE.2014.2327791
journal titleSelected Topics in Quantum Electronics, IEEE Journal of
journal volume20
journal issue6
filesize1303127
citations0


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