Show simple item record

Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer

contributor authorShoou-Jinn Chang
contributor authorChang, T.H.
contributor authorWeng, W.Y.
contributor authorChiu, C.J.
contributor authorChang, S.P.
date accessioned2020-03-13T00:08:21Z
date available2020-03-13T00:08:21Z
date issued2014
identifier issn1077-260X
identifier other6832459.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1135787?show=full
formatgeneral
languageEnglish
publisherIEEE
titleAmorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8317344
subject keywordsamorphous semiconductors
subject keywordselectron mobility
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsphototransistors
subject keywordsternary semiconductors
subject keywordszinc compounds
subject keywordsGa<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsInGaZnO
subject keywordsON/OFF current ratio
subject keywordsamorphous IGZO
subject keywordsamorphous ultraviolet phototransistors
subject keywordsdeep-ultraviolet (UV)-to-visible rejection ratio
subject keywordselectron mobility
subject keywordsnear-UV-to-visible rejection ratio
subject keywordsoxygen partial pressure
subject keywordssubthreshold swing
subject keywordsDielectrics
subject keywordsEducational institutions
subject keywordsLighting
subject keywordsLogic gates
subject keywordsMicroele
identifier doi10.1109/JSTQE.2014.2330604
journal titleSelected Topics in Quantum Electronics, IEEE Journal of
journal volume20
journal issue6
filesize699429
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record