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Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer

Author:
Shoou-Jinn Chang
,
Chang, T.H.
,
Weng, W.Y.
,
Chiu, C.J.
,
Chang, S.P.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/JSTQE.2014.2330604
URI: https://libsearch.um.ac.ir:443/fum/handle/fum/1135787
Keyword(s): amorphous semiconductors,electron mobility,gallium compounds,indium compounds,phototransistors,ternary semiconductors,zinc compounds,Ga<,sub>,2<,/sub>,O<,sub>,3<,/sub>,InGaZnO,ON/OFF current ratio,amorphous IGZO,amorphous ultraviolet phototransistors,deep-ultraviolet (UV)-to-visible rejection ratio,electron mobility,near-UV-to-visible rejection ratio,oxygen partial pressure,subthreshold swing,Dielectrics,Educational institutions,Lighting,Logic gates,Microele
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    Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Layer

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contributor authorShoou-Jinn Chang
contributor authorChang, T.H.
contributor authorWeng, W.Y.
contributor authorChiu, C.J.
contributor authorChang, S.P.
date accessioned2020-03-13T00:08:21Z
date available2020-03-13T00:08:21Z
date issued2014
identifier issn1077-260X
identifier other6832459.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1135787
formatgeneral
languageEnglish
publisherIEEE
titleAmorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8317344
subject keywordsamorphous semiconductors
subject keywordselectron mobility
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordsphototransistors
subject keywordsternary semiconductors
subject keywordszinc compounds
subject keywordsGa<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsInGaZnO
subject keywordsON/OFF current ratio
subject keywordsamorphous IGZO
subject keywordsamorphous ultraviolet phototransistors
subject keywordsdeep-ultraviolet (UV)-to-visible rejection ratio
subject keywordselectron mobility
subject keywordsnear-UV-to-visible rejection ratio
subject keywordsoxygen partial pressure
subject keywordssubthreshold swing
subject keywordsDielectrics
subject keywordsEducational institutions
subject keywordsLighting
subject keywordsLogic gates
subject keywordsMicroele
identifier doi10.1109/JSTQE.2014.2330604
journal titleSelected Topics in Quantum Electronics, IEEE Journal of
journal volume20
journal issue6
filesize699429
citations0
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