Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
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سال
: 2014شناسه الکترونیک: 10.1109/JSTQE.2014.2330604
کلیدواژه(گان): amorphous semiconductors,electron mobility,gallium compounds,indium compounds,phototransistors,ternary semiconductors,zinc compounds,Ga<,sub>,2<,/sub>,O<,sub>,3<,/sub>,InGaZnO,ON/OFF current ratio,amorphous IGZO,amorphous ultraviolet phototransistors,deep-ultraviolet (UV)-to-visible rejection ratio,electron mobility,near-UV-to-visible rejection ratio,oxygen partial pressure,subthreshold swing,Dielectrics,Educational institutions,Lighting,Logic gates,Microele
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آمار بازدید
Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer
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| contributor author | Shoou-Jinn Chang | |
| contributor author | Chang, T.H. | |
| contributor author | Weng, W.Y. | |
| contributor author | Chiu, C.J. | |
| contributor author | Chang, S.P. | |
| date accessioned | 2020-03-13T00:08:21Z | |
| date available | 2020-03-13T00:08:21Z | |
| date issued | 2014 | |
| identifier issn | 1077-260X | |
| identifier other | 6832459.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1135787?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga<sub>2</sub>O<sub>3</sub> Layer | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8317344 | |
| subject keywords | amorphous semiconductors | |
| subject keywords | electron mobility | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | phototransistors | |
| subject keywords | ternary semiconductors | |
| subject keywords | zinc compounds | |
| subject keywords | Ga< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | InGaZnO | |
| subject keywords | ON/OFF current ratio | |
| subject keywords | amorphous IGZO | |
| subject keywords | amorphous ultraviolet phototransistors | |
| subject keywords | deep-ultraviolet (UV)-to-visible rejection ratio | |
| subject keywords | electron mobility | |
| subject keywords | near-UV-to-visible rejection ratio | |
| subject keywords | oxygen partial pressure | |
| subject keywords | subthreshold swing | |
| subject keywords | Dielectrics | |
| subject keywords | Educational institutions | |
| subject keywords | Lighting | |
| subject keywords | Logic gates | |
| subject keywords | Microele | |
| identifier doi | 10.1109/JSTQE.2014.2330604 | |
| journal title | Selected Topics in Quantum Electronics, IEEE Journal of | |
| journal volume | 20 | |
| journal issue | 6 | |
| filesize | 699429 | |
| citations | 0 |