Show simple item record

Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs

contributor authorJeong Hyun Moon
contributor authorWook Bahng
contributor authorIn Ho Kang
contributor authorSang Cheol Kim
contributor authorNam-Kyun Kim
date accessioned2020-03-12T21:23:32Z
date available2020-03-12T21:23:32Z
date issued2014
identifier other6940051.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1047476?show=full
formatgeneral
languageEnglish
publisherIEEE
titleInvestigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs
typeConference Paper
contenttypeMetadata Only
identifier padid8176624
subject keywordsFrequency control
subject keywordsGenerators
subject keywordsLoad modeling
subject keywordsMathematical model
subject keywordsPhotovoltaic systems
subject keywordsRotors
subject keywordsancillary services
subject keywordsgrid services
subject keywordsphotovoltaic plants
subject keywordsprimary frequency control
subject keywordswind turbines
identifier doi10.1109/PSCC.2014.7038112
journal titleon Implantation Technology (IIT), 2014 20th International Conference on
filesize885529
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record