Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs

: 2014

یو آر آی: https://libsearch.um.ac.ir:443/fum/handle/fum/1047476

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Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs

contributor author	Jeong Hyun Moon
contributor author	Wook Bahng
contributor author	In Ho Kang
contributor author	Sang Cheol Kim
contributor author	Nam-Kyun Kim
date accessioned	2020-03-12T21:23:32Z
date available	2020-03-12T21:23:32Z
date issued	2014
identifier other	6940051.pdf
identifier uri	https://libsearch.um.ac.ir:443/fum/handle/fum/1047476?locale-attribute=fa
format	general
language	English
publisher	IEEE
title	Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs
type	Conference Paper
contenttype	Metadata Only
identifier padid	8176624
subject keywords	Frequency control
subject keywords	Generators
subject keywords	Load modeling
subject keywords	Mathematical model
subject keywords	Photovoltaic systems
subject keywords	Rotors
subject keywords	ancillary services
subject keywords	grid services
subject keywords	photovoltaic plants
subject keywords	primary frequency control
subject keywords	wind turbines
identifier doi	10.1109/PSCC.2014.7038112
journal title	on Implantation Technology (IIT), 2014 20th International Conference on
filesize	885529
citations	0

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