Search

نمایش تعداد 1-2 از 2

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

نوع: Journal Paper

نویسنده : Stoliar, P.; Levy, P.; Sanchez, Maria Jesus; Leyva, A.G.; Albornoz, C.A.; Gomez-Marlasca, F.; Zanini, Anibal; Toro Salazar, C.; Ghenzi, N.; Rozenberg, M.J.

ناشر: IEEE

سال: 2014

The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices

نوع: Journal Paper

نویسنده : Zheng Fang; Xin Peng Wang; Joon Sohn; Bao Bin Weng; Zhi Ping Zhang; Zhi Xian Chen; Yan Zhe Tang; Guo-Qiang Lo; Provine, J.; Wong, S. Simon; Wong, H.-S Philip; Dim-Lee Kwong

ناشر: IEEE

سال: 2014

Search

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

The Role of Ti Capping Layer in HfO<sub><italic>x</italic></sub>-Based RRAM Devices