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Universal relaxation characteristic of interface trap under FN and NBTI stress in pMOSFET device

Type: Journal Paper

Author : Seongwook Choi; Sooyoung Park; Chang-Ki Baek; Park, Young June

Publisher: IET

Year: 2014

Rapid labelling of SCADA data to extract transparent rules using RIPPER

Type: Conference Paper

Author : Godwin, J.L. , Matthews, P.

Publisher: IEEE

Year: 2014

Tutorial T8A: Realization of RF Front-End for a Cognitive Radio

Type: Conference Paper

Author : Kishore, B.R. , Rao, B.K.

Year: 2014

Payload minion stenographic technique for color images

Type: Conference Paper

Publisher: IEEE

Year: 2014

Motion Planning of Multi-docking System for Intelligent Mobile Robots

Type: Conference Paper

Author : Su, K.L. , Li, B.Y. , Guo, J.H. , Liao, Y.L.

Publisher: IEEE

Year: 2014

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Type: Conference Paper

Author : Itoh, H.

Publisher: IEEE

Year: 2014

Integration of a Piezoelectric Layer on Si FinFETs for Tunable Strained Device Applications

Type: Journal Paper

Author : Kaleli, Buket; Hueting, Raymond J. E.; Nguyen, Minh D.; Wolters, Rob /A/. M.

Publisher: IEEE

Year: 2014

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Type: Journal Paper

Author : Modic, Aaron; Gang Liu; Ahyi, Ayayi C.; Yuming Zhou; Pingye Xu; Hamilton, Michael C.; Williams, John R.; Feldman, L.C.; Dhar, Sudipta

Publisher: IEEE

Year: 2014

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

Type: Journal Paper

Author : Rui Zhang; Ju-Chin Lin; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

2014 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) [Copyright notice]

Type: Conference Paper

Year: 2014

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Universal relaxation characteristic of interface trap under FN and NBTI stress in pMOSFET device

Rapid labelling of SCADA data to extract transparent rules using RIPPER

Tutorial T8A: Realization of RF Front-End for a Cognitive Radio

Payload minion stenographic technique for color images

Motion Planning of Multi-docking System for Intelligent Mobile Robots

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Integration of a Piezoelectric Layer on Si FinFETs for Tunable Strained Device Applications

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

2014 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) [Copyright notice]

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Universal relaxation characteristic of interface trap under FN and NBTI stress in pMOSFET device

Rapid labelling of SCADA data to extract transparent rules using RIPPER

Tutorial T8A: Realization of RF Front-End for a Cognitive Radio

Payload minion stenographic technique for color images

Motion Planning of Multi-docking System for Intelligent Mobile Robots

Analysis of quality factor of quartz-crystal tuning fork fabricated by etching process

Integration of a Piezoelectric Layer on Si FinFETs for Tunable Strained Device Applications

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

2014 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) [Copyright notice]