High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
نویسنده:
, , , , , , , ,ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2336592
کلیدواژه(گان): MOSFET,annealing,antimony,carrier mobility,interface states,semiconductor doping,silicon compounds,wide band gap semiconductors,Sb,SiC,channel mobility,counter doping,enhancement mode 4H-SiC MOSFET,interface trap density,postoxidation annealing,surface channel,transverse surface electric field,Annealing,Doping,Logic gates,MOSFET,Passivation,Silicon carbide,4H-SiC MOSFET,antimony,counter-doping,mobility,ounter-doping.
کالکشن
:
-
آمار بازدید
High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping
Show full item record
| contributor author | Modic, Aaron | |
| contributor author | Gang Liu | |
| contributor author | Ahyi, Ayayi C. | |
| contributor author | Yuming Zhou | |
| contributor author | Pingye Xu | |
| contributor author | Hamilton, Michael C. | |
| contributor author | Williams, John R. | |
| contributor author | Feldman, L.C. | |
| contributor author | Dhar, Sudipta | |
| date accessioned | 2020-03-13T00:15:52Z | |
| date available | 2020-03-13T00:15:52Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6867347.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1140324 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8322655 | |
| subject keywords | MOSFET | |
| subject keywords | annealing | |
| subject keywords | antimony | |
| subject keywords | carrier mobility | |
| subject keywords | interface states | |
| subject keywords | semiconductor doping | |
| subject keywords | silicon compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | Sb | |
| subject keywords | SiC | |
| subject keywords | channel mobility | |
| subject keywords | counter doping | |
| subject keywords | enhancement mode 4H-SiC MOSFET | |
| subject keywords | interface trap density | |
| subject keywords | postoxidation annealing | |
| subject keywords | surface channel | |
| subject keywords | transverse surface electric field | |
| subject keywords | Annealing | |
| subject keywords | Doping | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Passivation | |
| subject keywords | Silicon carbide | |
| subject keywords | 4H-SiC MOSFET | |
| subject keywords | antimony | |
| subject keywords | counter-doping | |
| subject keywords | mobility | |
| subject keywords | ounter-doping. | |
| identifier doi | 10.1109/LED.2014.2336592 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 9 | |
| filesize | 492468 | |
| citations | 0 |