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Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Type: Journal Paper

Author : Okamoto, Dai; Sometani, Mitsuru; Harada, Shingo; Kosugi, Ryoji; Yonezawa, Yoshiyuki; Yano, Hiroyuki

Publisher: IEEE

Year: 2014

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Type: Journal Paper

Author : Cheol Hyoun Ahn; Myung Gu Yun; Sang Yeol Lee; Hyung Koun Cho

Publisher: IEEE

Year: 2014

Symmetric 100-Gb/s TWDM-PON with DSB OFDM modulation

Type: Conference Paper

Publisher: IEEE

Year: 2014

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Type: Journal Paper

Author : Majumdar, Angshul; Ko-Tao Lee; Cheng-Wei Cheng; Kuen-Ting Shiu; Sadana, Devendra K.; Leobandung, Effendi

Publisher: IEEE

Year: 2014

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method

Type: Journal Paper

Author : Mativenga, Mallory; Sungjin An; Suhui Lee; Jaegwang Um; Di Geng; Mruthyunjaya, Ravi K.; Heiler, Gregory N.; Tredwell, Timothy John; Jin Jang

Publisher: IEEE

Year: 2014

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Type: Journal Paper

Author : Modic, Aaron; Gang Liu; Ahyi, Ayayi C.; Yuming Zhou; Pingye Xu; Hamilton, Michael C.; Williams, John R.; Feldman, L.C.; Dhar, Sudipta

Publisher: IEEE

Year: 2014

Towards Interoperability of Adaptive Social-Aware Routing at the Tactical Edge

Type: Conference Paper

Author : Gao, Wei; Patel, Mitesh

Publisher: IEEE

Year: 2014

Efficient method for moving object detection in cluttered background using Gaussian Mixture Model

Type: Conference Paper

Author : Yadav, Dileep Kumar

Publisher: IEEE

Year: 2014

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

Type: Journal Paper

Author : Zhaoyun Tang; Bo Tang; Lichuan Zhao; Guilei Wang; Jing Xu; Yefeng Xu; Hongli Wang; Dahai Wang; Junfeng Li; Fujiang Lin; Jiang Yan; Chao Zhao; Tianchun Ye

Publisher: IEEE

Year: 2014

Neural net based complete character recognition scheme for Bangla printed text books

Type: Conference Paper

Author : Hossain, S K Alamgir; Tabassum, Tamanna

Publisher: IEEE

Year: 2014

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Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Symmetric 100-Gb/s TWDM-PON with DSB OFDM modulation

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Towards Interoperability of Adaptive Social-Aware Routing at the Tactical Edge

Efficient method for moving object detection in cluttered background using Gaussian Mixture Model

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

Neural net based complete character recognition scheme for Bangla printed text books

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Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Symmetric 100-Gb/s TWDM-PON with DSB OFDM modulation

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Intrinsic Channel Mobility of Amorphous, In&#x2013;Ga&#x2013;Zn&#x2013;O Thin-Film Transistors by a Gated Four-Probe Method

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Towards Interoperability of Adaptive Social-Aware Routing at the Tactical Edge

Efficient method for moving object detection in cluttered background using Gaussian Mixture Model

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

Neural net based complete character recognition scheme for Bangla printed text books

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method