Provenance-Based Prediction Scheme for Object Storage System in HPC
ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/ICSICT.2014.7021437
کلیدواژه(گان): MOSFET,cores,elemental semiconductors,integrated circuit design,leakage currents,low-power electronics,radiation hardening (electronics),silicon,I/O devices,I/O transistors,Si,TID tolerance,bulk silicon nMOSFET,core devices,device geometry,integrated circuit,off-state leakage current degradation,radiation induced threshold voltage shift,radiation response,radiation-hardened design,size 65 nm,static power consumption,total ionizing dose,Abstracts,MOSFET,MOSFET circuits
کالکشن
:
-
آمار بازدید
Provenance-Based Prediction Scheme for Object Storage System in HPC
Show full item record
| contributor author | Dong Dai , Yong Chen , Kimpe, D. , Ross, R. | |
| date accessioned | 2020-03-12T20:01:16Z | |
| date available | 2020-03-12T20:01:16Z | |
| date issued | 2014 | |
| identifier other | 6846497.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/998839 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Provenance-Based Prediction Scheme for Object Storage System in HPC | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8119086 | |
| subject keywords | MOSFET | |
| subject keywords | cores | |
| subject keywords | elemental semiconductors | |
| subject keywords | integrated circuit design | |
| subject keywords | leakage currents | |
| subject keywords | low-power electronics | |
| subject keywords | radiation hardening (electronics) | |
| subject keywords | silicon | |
| subject keywords | I/O devices | |
| subject keywords | I/O transistors | |
| subject keywords | Si | |
| subject keywords | TID tolerance | |
| subject keywords | bulk silicon nMOSFET | |
| subject keywords | core devices | |
| subject keywords | device geometry | |
| subject keywords | integrated circuit | |
| subject keywords | off-state leakage current degradation | |
| subject keywords | radiation induced threshold voltage shift | |
| subject keywords | radiation response | |
| subject keywords | radiation-hardened design | |
| subject keywords | size 65 nm | |
| subject keywords | static power consumption | |
| subject keywords | total ionizing dose | |
| subject keywords | Abstracts | |
| subject keywords | MOSFET | |
| subject keywords | MOSFET circuits | |
| identifier doi | 10.1109/ICSICT.2014.7021437 | |
| journal title | luster, Cloud and Grid Computing (CCGrid), 2014 14th IEEE/ACM International Symposium on | |
| filesize | 553758 | |
| citations | 0 |