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Parameter Extraction Procedure for a Physics-Based Power SiC Schottky Diode Model

contributor authorRuiyun Fu
contributor authorGrekov, Alexander E.
contributor authorKang Peng
contributor authorSanti, Enrico
date accessioned2020-03-12T18:45:11Z
date available2020-03-12T18:45:11Z
date issued2014
identifier issn0093-9994
identifier other6732948.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/968955?show=full
formatgeneral
languageEnglish
publisherIEEE
titleParameter Extraction Procedure for a Physics-Based Power SiC Schottky Diode Model
typeJournal Paper
contenttypeMetadata Only
identifier padid8003173
subject keywordsSchottky diodes
subject keywordscarrier density
subject keywordspower semiconductor diodes
subject keywordssemiconductor device models
subject keywordssilicon compounds
subject keywordswide band gap semiconductors
subject keywordsC-V measurements
subject keywordsSiC
subject keywordsactive area
subject keywordscarrier concentration
subject keywordsdrift region thickness
subject keywordsparameter extraction procedure
subject keywordsphysics-based power SiC Schottky diode model
subject keywordsstatic I-V characterization
subject keywordstemperature dependences
subject keywordsCapacitance-voltage characteristics
subject keywordsEquations
subject keywordsMathematical model
subject keywordsParameter extraction
subject keywordsSchottky diodes
subject keywordsSilicon carbide
subject keywordsTemperature measureme
identifier doi10.1109/TIA.2014.2304617
journal titleIndustry Applications, IEEE Transactions on
journal volume50
journal issue5
filesize2486907
citations0


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