Parameter Extraction Procedure for a Physics-Based Power SiC Schottky Diode Model
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: 2014شناسه الکترونیک: 10.1109/TIA.2014.2304617
کلیدواژه(گان): Schottky diodes,carrier density,power semiconductor diodes,semiconductor device models,silicon compounds,wide band gap semiconductors,C-V measurements,SiC,active area,carrier concentration,drift region thickness,parameter extraction procedure,physics-based power SiC Schottky diode model,static I-V characterization,temperature dependences,Capacitance-voltage characteristics,Equations,Mathematical model,Parameter extraction,Schottky diodes,Silicon carbide,Temperature measureme
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Parameter Extraction Procedure for a Physics-Based Power SiC Schottky Diode Model
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| contributor author | Ruiyun Fu | |
| contributor author | Grekov, Alexander E. | |
| contributor author | Kang Peng | |
| contributor author | Santi, Enrico | |
| date accessioned | 2020-03-12T18:45:11Z | |
| date available | 2020-03-12T18:45:11Z | |
| date issued | 2014 | |
| identifier issn | 0093-9994 | |
| identifier other | 6732948.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/968955 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Parameter Extraction Procedure for a Physics-Based Power SiC Schottky Diode Model | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8003173 | |
| subject keywords | Schottky diodes | |
| subject keywords | carrier density | |
| subject keywords | power semiconductor diodes | |
| subject keywords | semiconductor device models | |
| subject keywords | silicon compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | C-V measurements | |
| subject keywords | SiC | |
| subject keywords | active area | |
| subject keywords | carrier concentration | |
| subject keywords | drift region thickness | |
| subject keywords | parameter extraction procedure | |
| subject keywords | physics-based power SiC Schottky diode model | |
| subject keywords | static I-V characterization | |
| subject keywords | temperature dependences | |
| subject keywords | Capacitance-voltage characteristics | |
| subject keywords | Equations | |
| subject keywords | Mathematical model | |
| subject keywords | Parameter extraction | |
| subject keywords | Schottky diodes | |
| subject keywords | Silicon carbide | |
| subject keywords | Temperature measureme | |
| identifier doi | 10.1109/TIA.2014.2304617 | |
| journal title | Industry Applications, IEEE Transactions on | |
| journal volume | 50 | |
| journal issue | 5 | |
| filesize | 2486907 | |
| citations | 0 |