Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT
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Year
: 2014DOI: 10.1109/LED.2014.2298871
Keyword(s): MIS devices,X-ray photoelectron spectra,annealing,capacitance measurement,conduction bands,dielectric materials,elemental semiconductors,germanium,interface states,leakage currents,passivation,samarium compounds,semiconductor device reliability,Ge,Ge MOS devices,Ge substrate,Sm-Ge-O bonding,SmGeO<,sub>,x<,/sub>,X-ray photoelectron spectroscopy,annealing,bias temperature instability,bulk dielectric,capacitance measurement,conduction band offset,equivalent oxide th
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Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT
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| contributor author | Chia-Chun Lin | |
| contributor author | Yung-Hsien Wu | |
| contributor author | Chao-Yi Wu | |
| contributor author | Ching-Wei Lee | |
| date accessioned | 2020-03-12T18:43:50Z | |
| date available | 2020-03-12T18:43:50Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6729040.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/968342?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8002448 | |
| subject keywords | MIS devices | |
| subject keywords | X-ray photoelectron spectra | |
| subject keywords | annealing | |
| subject keywords | capacitance measurement | |
| subject keywords | conduction bands | |
| subject keywords | dielectric materials | |
| subject keywords | elemental semiconductors | |
| subject keywords | germanium | |
| subject keywords | interface states | |
| subject keywords | leakage currents | |
| subject keywords | passivation | |
| subject keywords | samarium compounds | |
| subject keywords | semiconductor device reliability | |
| subject keywords | Ge | |
| subject keywords | Ge MOS devices | |
| subject keywords | Ge substrate | |
| subject keywords | Sm-Ge-O bonding | |
| subject keywords | SmGeO< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | X-ray photoelectron spectroscopy | |
| subject keywords | annealing | |
| subject keywords | bias temperature instability | |
| subject keywords | bulk dielectric | |
| subject keywords | capacitance measurement | |
| subject keywords | conduction band offset | |
| subject keywords | equivalent oxide th | |
| identifier doi | 10.1109/LED.2014.2298871 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 3 | |
| filesize | 658603 | |
| citations | 0 |