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Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

contributor authorChia-Chun Lin
contributor authorYung-Hsien Wu
contributor authorChao-Yi Wu
contributor authorChing-Wei Lee
date accessioned2020-03-12T18:43:50Z
date available2020-03-12T18:43:50Z
date issued2014
identifier issn0741-3106
identifier other6729040.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/968342?show=full
formatgeneral
languageEnglish
publisherIEEE
titleSurface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT
typeJournal Paper
contenttypeMetadata Only
identifier padid8002448
subject keywordsMIS devices
subject keywordsX-ray photoelectron spectra
subject keywordsannealing
subject keywordscapacitance measurement
subject keywordsconduction bands
subject keywordsdielectric materials
subject keywordselemental semiconductors
subject keywordsgermanium
subject keywordsinterface states
subject keywordsleakage currents
subject keywordspassivation
subject keywordssamarium compounds
subject keywordssemiconductor device reliability
subject keywordsGe
subject keywordsGe MOS devices
subject keywordsGe substrate
subject keywordsSm-Ge-O bonding
subject keywordsSmGeO<
subject keywordssub>
subject keywordsx<
subject keywords/sub>
subject keywordsX-ray photoelectron spectroscopy
subject keywordsannealing
subject keywordsbias temperature instability
subject keywordsbulk dielectric
subject keywordscapacitance measurement
subject keywordsconduction band offset
subject keywordsequivalent oxide th
identifier doi10.1109/LED.2014.2298871
journal titleElectron Device Letters, IEEE
journal volume35
journal issue3
filesize658603
citations0


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