Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
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: 2014DOI: 10.1109/LED.2013.2294828
Keyword(s): chemical vapour deposition,electric variables measurement,field effect transistors,flexible electronics,graphene,hole mobility,pulse measurement,C,Dirac voltage,GFET,ambipolar transfer characteristics,charge trapping,chemical vapor deposition,dc measurement,electron hole mobility,flexible graphene field effect transistors,gate-voltage scanning rate,graphene devices,high-performance field effect transistors,hysteretic electrical characteristics,intrinsic properties,intrinsic-
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Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
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| contributor author | Saungeun Park | |
| contributor author | Sangchul Lee | |
| contributor author | Mordi, G. | |
| contributor author | Jandhyala, Srivatsava | |
| contributor author | Min-Woo Ha | |
| contributor author | Jang-Sik Lee | |
| contributor author | Colombo, Luigi | |
| contributor author | Wallace, Robert M. | |
| contributor author | Byoung Hun Lee | |
| contributor author | Jiyoung Kim | |
| date accessioned | 2020-03-12T18:39:21Z | |
| date available | 2020-03-12T18:39:21Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6704711.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/965789?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7999493 | |
| subject keywords | chemical vapour deposition | |
| subject keywords | electric variables measurement | |
| subject keywords | field effect transistors | |
| subject keywords | flexible electronics | |
| subject keywords | graphene | |
| subject keywords | hole mobility | |
| subject keywords | pulse measurement | |
| subject keywords | C | |
| subject keywords | Dirac voltage | |
| subject keywords | GFET | |
| subject keywords | ambipolar transfer characteristics | |
| subject keywords | charge trapping | |
| subject keywords | chemical vapor deposition | |
| subject keywords | dc measurement | |
| subject keywords | electron hole mobility | |
| subject keywords | flexible graphene field effect transistors | |
| subject keywords | gate-voltage scanning rate | |
| subject keywords | graphene devices | |
| subject keywords | high-performance field effect transistors | |
| subject keywords | hysteretic electrical characteristics | |
| subject keywords | intrinsic properties | |
| subject keywords | intrinsic- | |
| identifier doi | 10.1109/LED.2013.2294828 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 2 | |
| filesize | 492338 | |
| citations | 4 |