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Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

contributor authorSaungeun Park
contributor authorSangchul Lee
contributor authorMordi, G.
contributor authorJandhyala, Srivatsava
contributor authorMin-Woo Ha
contributor authorJang-Sik Lee
contributor authorColombo, Luigi
contributor authorWallace, Robert M.
contributor authorByoung Hun Lee
contributor authorJiyoung Kim
date accessioned2020-03-12T18:39:21Z
date available2020-03-12T18:39:21Z
date issued2014
identifier issn0741-3106
identifier other6704711.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/965789?show=full
formatgeneral
languageEnglish
publisherIEEE
titleTriangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
typeJournal Paper
contenttypeMetadata Only
identifier padid7999493
subject keywordschemical vapour deposition
subject keywordselectric variables measurement
subject keywordsfield effect transistors
subject keywordsflexible electronics
subject keywordsgraphene
subject keywordshole mobility
subject keywordspulse measurement
subject keywordsC
subject keywordsDirac voltage
subject keywordsGFET
subject keywordsambipolar transfer characteristics
subject keywordscharge trapping
subject keywordschemical vapor deposition
subject keywordsdc measurement
subject keywordselectron hole mobility
subject keywordsflexible graphene field effect transistors
subject keywordsgate-voltage scanning rate
subject keywordsgraphene devices
subject keywordshigh-performance field effect transistors
subject keywordshysteretic electrical characteristics
subject keywordsintrinsic properties
subject keywordsintrinsic-
identifier doi10.1109/LED.2013.2294828
journal titleElectron Device Letters, IEEE
journal volume35
journal issue2
filesize492338
citations4


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