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Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

contributor authorStoliar, P.
contributor authorLevy, P.
contributor authorSanchez, Maria Jesus
contributor authorLeyva, A.G.
contributor authorAlbornoz, C.A.
contributor authorGomez-Marlasca, F.
contributor authorZanini, Anibal
contributor authorToro Salazar, C.
contributor authorGhenzi, N.
contributor authorRozenberg, M.J.
date accessioned2020-03-12T18:36:57Z
date available2020-03-12T18:36:57Z
date issued2014
identifier issn1549-7747
identifier other6689338.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/964442?show=full
formatgeneral
languageEnglish
publisherIEEE
titleNonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit
typeJournal Paper
contenttypeMetadata Only
identifier padid7997943
subject keywordscircuit stability
subject keywordsrandom-access storage
subject keywordsRS based MLC
subject keywordsReRAM
subject keywordsmanganite based RS device
subject keywordsmultilevel cell
subject keywordsnonvolatile memory cell
subject keywordsresistive random access memory
subject keywordsresistive switching
subject keywordstransition metal oxide-based circuit
subject keywordsHistograms
subject keywordsMetals
subject keywordsNonvolatile memory
subject keywordsResistance
subject keywordsStability analysis
subject keywordsSwitches
subject keywordsTuning
subject keywordsMultilevel cell (MLC)
subject keywordsnonvolatile memory
subject keywordsresistive random access memory (ReRAM)
subject keywordsresistive switching (RS)
identifier doi10.1109/TCSII.2013.2290921
journal titleCircuits and Systems II: Express Briefs, IEEE Transactions on
journal volume61
journal issue1
filesize761493
citations0


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