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Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

contributor authorYu-Sheng Chen
contributor authorHeng-Yuan Lee
contributor authorPang-Shiu Chen
contributor authorWei-Su Chen
contributor authorKan-Hsueh Tsai
contributor authorPei-Yi Gu
contributor authorTai-Yuan Wu
contributor authorChen-Han Tsai
contributor authorRahaman, S.Z.
contributor authorYu-De Lin
contributor authorChen, Fan
contributor authorMing-Jinn Tsai
contributor authorTzu-Kun Ku
date accessioned2020-03-12T18:36:52Z
date available2020-03-12T18:36:52Z
date issued2014
identifier issn0741-3106
identifier other6689291.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/964398?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleNovel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
typeJournal Paper
contenttypeMetadata Only
identifier padid7997882
subject keywordscurrent density
subject keywordshafnium compounds
subject keywordsrandom-access storage
subject keywordstantalum compounds
subject keywordsTa-TaO<
subject keywordssub>
subject keywordsX<
subject keywords/sub>
subject keywords-HfO<
subject keywordssub>
subject keywordsX<
subject keywords/sub>
subject keywordscell size
subject keywordsconstant current density switching
subject keywordsdefects-trapping RRAM
subject keywordsdefects-trapping mechanism
subject keywordsdefects-trapping transport
subject keywordsdevice initial state
subject keywordsgeneral filamentary
subject keywordsoperation current
subject keywordsstable resistive switching
subject keywordsswitching current reduction
subject keywordstransition metal oxide RRAM
subject keywordsultra-low current
subject keywordsvertical RRAM structure
subject keywordsArrays
subject keywordsHafnium compounds
subject keywordsMicroprocessors
identifier doi10.1109/LED.2013.2294375
journal titleElectron Device Letters, IEEE
journal volume35
journal issue2
filesize676047
citations0


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