Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2013.2294375
کلیدواژه(گان): current density,hafnium compounds,random-access storage,tantalum compounds,Ta-TaO<,sub>,X<,/sub>,-HfO<,sub>,X<,/sub>,cell size,constant current density switching,defects-trapping RRAM,defects-trapping mechanism,defects-trapping transport,device initial state,general filamentary,operation current,stable resistive switching,switching current reduction,transition metal oxide RRAM,ultra-low current,vertical RRAM structure,Arrays,Hafnium compounds,Microprocessors
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Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
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| contributor author | Yu-Sheng Chen | |
| contributor author | Heng-Yuan Lee | |
| contributor author | Pang-Shiu Chen | |
| contributor author | Wei-Su Chen | |
| contributor author | Kan-Hsueh Tsai | |
| contributor author | Pei-Yi Gu | |
| contributor author | Tai-Yuan Wu | |
| contributor author | Chen-Han Tsai | |
| contributor author | Rahaman, S.Z. | |
| contributor author | Yu-De Lin | |
| contributor author | Chen, Fan | |
| contributor author | Ming-Jinn Tsai | |
| contributor author | Tzu-Kun Ku | |
| date accessioned | 2020-03-12T18:36:52Z | |
| date available | 2020-03-12T18:36:52Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6689291.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/964398?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Novel Defects-Trapping <formula formulatype="inline"> <img src="/images/tex/21375.gif" alt="{\\rm TaO}_{\\rm X}/{\\rm HfO}_{\\rm X}"> </formula> RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7997882 | |
| subject keywords | current density | |
| subject keywords | hafnium compounds | |
| subject keywords | random-access storage | |
| subject keywords | tantalum compounds | |
| subject keywords | Ta-TaO< | |
| subject keywords | sub> | |
| subject keywords | X< | |
| subject keywords | /sub> | |
| subject keywords | -HfO< | |
| subject keywords | sub> | |
| subject keywords | X< | |
| subject keywords | /sub> | |
| subject keywords | cell size | |
| subject keywords | constant current density switching | |
| subject keywords | defects-trapping RRAM | |
| subject keywords | defects-trapping mechanism | |
| subject keywords | defects-trapping transport | |
| subject keywords | device initial state | |
| subject keywords | general filamentary | |
| subject keywords | operation current | |
| subject keywords | stable resistive switching | |
| subject keywords | switching current reduction | |
| subject keywords | transition metal oxide RRAM | |
| subject keywords | ultra-low current | |
| subject keywords | vertical RRAM structure | |
| subject keywords | Arrays | |
| subject keywords | Hafnium compounds | |
| subject keywords | Microprocessors | |
| identifier doi | 10.1109/LED.2013.2294375 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 2 | |
| filesize | 676047 | |
| citations | 0 |