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Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

contributor authorLeqi Zhang
contributor authorRedolfi, A.
contributor authorAdelmann, C.
contributor authorClima, S.
contributor authorRadu, Iuliana P.
contributor authorYang-Yin Chen
contributor authorWouters, D.J.
contributor authorGroeseneken, Guido
contributor authorJurczak, Malgorzata
contributor authorGovoreanu, B.
date accessioned2020-03-12T18:36:16Z
date available2020-03-12T18:36:16Z
date issued2014
identifier issn0741-3106
identifier other6684313.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/964038?show=full
formatgeneral
languageEnglish
publisherIEEE
titleUltrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
typeJournal Paper
contenttypeMetadata Only
identifier padid7997466
subject keywordsamorphous semiconductors
subject keywordselemental semiconductors
subject keywordsrandom-access storage
subject keywordssemiconductor diodes
subject keywordssilicon
subject keywordsSi
subject keywordsbidirectional diode
subject keywordsbipolar RRAM selector applications
subject keywordscircuit simulations
subject keywordsdopant activation anneal
subject keywordsdopant induced variability
subject keywordsfast switching speed
subject keywordshigh current drive
subject keywordshigh selectivity
subject keywordsmetal diode
subject keywordsmetal silicon metal selector
subject keywordsresistive RAM
subject keywordsresistive switching memory element
subject keywordsultrascaled devices
subject keywordsultrathin metal
subject keywordsultrathin undoped amorphous silicon
subject keywordsArrays
subject keywordsDoping
subject keywordsMetals
subject keywordsPerfo
identifier doi10.1109/LED.2013.2293591
journal titleElectron Device Letters, IEEE
journal volume35
journal issue2
filesize1289677
citations0


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