Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2013.2293591
کلیدواژه(گان): amorphous semiconductors,elemental semiconductors,random-access storage,semiconductor diodes,silicon,Si,bidirectional diode,bipolar RRAM selector applications,circuit simulations,dopant activation anneal,dopant induced variability,fast switching speed,high current drive,high selectivity,metal diode,metal silicon metal selector,resistive RAM,resistive switching memory element,ultrascaled devices,ultrathin metal,ultrathin undoped amorphous silicon,Arrays,Doping,Metals,Perfo
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Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
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| contributor author | Leqi Zhang | |
| contributor author | Redolfi, A. | |
| contributor author | Adelmann, C. | |
| contributor author | Clima, S. | |
| contributor author | Radu, Iuliana P. | |
| contributor author | Yang-Yin Chen | |
| contributor author | Wouters, D.J. | |
| contributor author | Groeseneken, Guido | |
| contributor author | Jurczak, Malgorzata | |
| contributor author | Govoreanu, B. | |
| date accessioned | 2020-03-12T18:36:16Z | |
| date available | 2020-03-12T18:36:16Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6684313.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/964038 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7997466 | |
| subject keywords | amorphous semiconductors | |
| subject keywords | elemental semiconductors | |
| subject keywords | random-access storage | |
| subject keywords | semiconductor diodes | |
| subject keywords | silicon | |
| subject keywords | Si | |
| subject keywords | bidirectional diode | |
| subject keywords | bipolar RRAM selector applications | |
| subject keywords | circuit simulations | |
| subject keywords | dopant activation anneal | |
| subject keywords | dopant induced variability | |
| subject keywords | fast switching speed | |
| subject keywords | high current drive | |
| subject keywords | high selectivity | |
| subject keywords | metal diode | |
| subject keywords | metal silicon metal selector | |
| subject keywords | resistive RAM | |
| subject keywords | resistive switching memory element | |
| subject keywords | ultrascaled devices | |
| subject keywords | ultrathin metal | |
| subject keywords | ultrathin undoped amorphous silicon | |
| subject keywords | Arrays | |
| subject keywords | Doping | |
| subject keywords | Metals | |
| subject keywords | Perfo | |
| identifier doi | 10.1109/LED.2013.2293591 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 2 | |
| filesize | 1289677 | |
| citations | 0 |