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Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

contributor authorWei Feng
contributor authorChun Meng Dou
contributor authorNiwa, Masaaki
contributor authorYamada, Koji
contributor authorOhmori, Kenji
date accessioned2020-03-12T18:33:52Z
date available2020-03-12T18:33:52Z
date issued2014
identifier issn0741-3106
identifier other6672013.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/962660?show=full
formatgeneral
languageEnglish
publisherIEEE
titleImpact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
typeJournal Paper
contenttypeMetadata Only
identifier padid7995728
subject keywordsMOSFET
subject keywordsrandom noise
subject keywordssemiconductor device noise
subject keywordsMOSFETs
subject keywordsRTN profiles
subject keywordsdrain-current fluctuation
subject keywordsdynamic gate bias
subject keywordspulsed gate voltage cycle
subject keywordsrandom telegraph noise profiles
subject keywordstrap occupation states
subject keywordsultrahigh speed circuit design
subject keywordsElectron traps
subject keywordsHistograms
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsNoise
subject keywordsPeriodic structures
subject keywordsMOSFETs
subject keywordsdynamic gate bias
subject keywordsrandom telegraph noise
identifier doi10.1109/LED.2013.2288981
journal titleElectron Device Letters, IEEE
journal volume35
journal issue1
filesize519446
citations0


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