Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
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Year
: 2014DOI: 10.1109/LED.2013.2288981
Keyword(s): MOSFET,random noise,semiconductor device noise,MOSFETs,RTN profiles,drain-current fluctuation,dynamic gate bias,pulsed gate voltage cycle,random telegraph noise profiles,trap occupation states,ultrahigh speed circuit design,Electron traps,Histograms,Logic gates,MOSFET,Noise,Periodic structures,MOSFETs,dynamic gate bias,random telegraph noise
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Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias
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| contributor author | Wei Feng | |
| contributor author | Chun Meng Dou | |
| contributor author | Niwa, Masaaki | |
| contributor author | Yamada, Koji | |
| contributor author | Ohmori, Kenji | |
| date accessioned | 2020-03-12T18:33:52Z | |
| date available | 2020-03-12T18:33:52Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6672013.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/962660 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7995728 | |
| subject keywords | MOSFET | |
| subject keywords | random noise | |
| subject keywords | semiconductor device noise | |
| subject keywords | MOSFETs | |
| subject keywords | RTN profiles | |
| subject keywords | drain-current fluctuation | |
| subject keywords | dynamic gate bias | |
| subject keywords | pulsed gate voltage cycle | |
| subject keywords | random telegraph noise profiles | |
| subject keywords | trap occupation states | |
| subject keywords | ultrahigh speed circuit design | |
| subject keywords | Electron traps | |
| subject keywords | Histograms | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Noise | |
| subject keywords | Periodic structures | |
| subject keywords | MOSFETs | |
| subject keywords | dynamic gate bias | |
| subject keywords | random telegraph noise | |
| identifier doi | 10.1109/LED.2013.2288981 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 1 | |
| filesize | 519446 | |
| citations | 0 |