Show simple item record

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

contributor authorXinke Wu
contributor authorShidong Cheng
contributor authorQiang Xiao
contributor authorKuang Sheng
date accessioned2020-03-12T18:31:03Z
date available2020-03-12T18:31:03Z
date issued2014
identifier issn0885-8993
identifier other6648453.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/961151?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver
typeJournal Paper
contenttypeMetadata Only
identifier padid7993898
subject keywordsMOSFET
subject keywordsnetwork topology
subject keywordssilicon compounds
subject keywordswide band gap semiconductors
subject keywordsSiC
subject keywordsSiC MOSFET module
subject keywordscircuit switching speed
subject keywordscurrent 40 A
subject keywordscurrent 78 A
subject keywordscurrent 80 A
subject keywordscurrent capability
subject keywordsexternal gate driver
subject keywordsparallel connection
subject keywordsseries connection topology
subject keywordsseries-parallel-connected configuration
subject keywordssilicon carbide MOSFET
subject keywordsswitching losses
subject keywordsvoltage 1200 V
subject keywordsvoltage 2300 V
subject keywordsvoltage 3600 V
subject keywordsClamps
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsSchottky diodes
subject keywordsSilicon
subject keywordsSilicon carbide
subject keywordsSwitching circuits
subject keywordsModule
subject keywordsSiC MOSFET
identifier doi10.1109/TPEL.2013.2287382
journal titlePower Electronics, IEEE Transactions on
journal volume29
journal issue5
filesize1410993
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record