A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver
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سال
: 2014شناسه الکترونیک: 10.1109/TPEL.2013.2287382
کلیدواژه(گان): MOSFET,network topology,silicon compounds,wide band gap semiconductors,SiC,SiC MOSFET module,circuit switching speed,current 40 A,current 78 A,current 80 A,current capability,external gate driver,parallel connection,series connection topology,series-parallel-connected configuration,silicon carbide MOSFET,switching losses,voltage 1200 V,voltage 2300 V,voltage 3600 V,Clamps,Logic gates,MOSFET,Schottky diodes,Silicon,Silicon carbide,Switching circuits,Module,SiC MOSFET
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A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver
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| contributor author | Xinke Wu | |
| contributor author | Shidong Cheng | |
| contributor author | Qiang Xiao | |
| contributor author | Kuang Sheng | |
| date accessioned | 2020-03-12T18:31:03Z | |
| date available | 2020-03-12T18:31:03Z | |
| date issued | 2014 | |
| identifier issn | 0885-8993 | |
| identifier other | 6648453.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/961151 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7993898 | |
| subject keywords | MOSFET | |
| subject keywords | network topology | |
| subject keywords | silicon compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | SiC | |
| subject keywords | SiC MOSFET module | |
| subject keywords | circuit switching speed | |
| subject keywords | current 40 A | |
| subject keywords | current 78 A | |
| subject keywords | current 80 A | |
| subject keywords | current capability | |
| subject keywords | external gate driver | |
| subject keywords | parallel connection | |
| subject keywords | series connection topology | |
| subject keywords | series-parallel-connected configuration | |
| subject keywords | silicon carbide MOSFET | |
| subject keywords | switching losses | |
| subject keywords | voltage 1200 V | |
| subject keywords | voltage 2300 V | |
| subject keywords | voltage 3600 V | |
| subject keywords | Clamps | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Schottky diodes | |
| subject keywords | Silicon | |
| subject keywords | Silicon carbide | |
| subject keywords | Switching circuits | |
| subject keywords | Module | |
| subject keywords | SiC MOSFET | |
| identifier doi | 10.1109/TPEL.2013.2287382 | |
| journal title | Power Electronics, IEEE Transactions on | |
| journal volume | 29 | |
| journal issue | 5 | |
| filesize | 1410993 | |
| citations | 0 |