Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

نویسنده:
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ناشر:
سال
: 2014
شناسه الکترونیک: 10.1109/TNANO.2013.2279035
کلیدواژه(گان): Fermi level,Green',s function methods,ab initio calculations,boron,density functional theory,electrical conductivity,electronic density of states,energy gap,field effect transistors,fullerene devices,graphene,nanoelectronics,nanoribbons,negative resistance,nitrogen,passivation,semiconductor doping,semiconductor materials,Bloch functions,C:N,B,DFT,Fermi level,I-V characteristics,NEGF formalism,band gap,band structure,boron doping,current-voltage characteristics,den
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