Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance
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Year
: 2014DOI: 10.1109/TNANO.2013.2279035
Keyword(s): Fermi level,Green',s function methods,ab initio calculations,boron,density functional theory,electrical conductivity,electronic density of states,energy gap,field effect transistors,fullerene devices,graphene,nanoelectronics,nanoribbons,negative resistance,nitrogen,passivation,semiconductor doping,semiconductor materials,Bloch functions,C:N,B,DFT,Fermi level,I-V characteristics,NEGF formalism,band gap,band structure,boron doping,current-voltage characteristics,den
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Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance
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| contributor author | Kumar, Ajit | |
| contributor author | Kumar, Vipin | |
| contributor author | Agarwal, Sankalp | |
| contributor author | Basak, Abhishek | |
| contributor author | Jain, Nikhil | |
| contributor author | Bulusu, Anand | |
| contributor author | Manhas, Sanjeev Kumar | |
| date accessioned | 2020-03-12T18:26:44Z | |
| date available | 2020-03-12T18:26:44Z | |
| date issued | 2014 | |
| identifier issn | 1536-125X | |
| identifier other | 6583289.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/958739?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7991219 | |
| subject keywords | Fermi level | |
| subject keywords | Green' | |
| subject keywords | s function methods | |
| subject keywords | ab initio calculations | |
| subject keywords | boron | |
| subject keywords | density functional theory | |
| subject keywords | electrical conductivity | |
| subject keywords | electronic density of states | |
| subject keywords | energy gap | |
| subject keywords | field effect transistors | |
| subject keywords | fullerene devices | |
| subject keywords | graphene | |
| subject keywords | nanoelectronics | |
| subject keywords | nanoribbons | |
| subject keywords | negative resistance | |
| subject keywords | nitrogen | |
| subject keywords | passivation | |
| subject keywords | semiconductor doping | |
| subject keywords | semiconductor materials | |
| subject keywords | Bloch functions | |
| subject keywords | C:N,B | |
| subject keywords | DFT | |
| subject keywords | Fermi level | |
| subject keywords | I-V characteristics | |
| subject keywords | NEGF formalism | |
| subject keywords | band gap | |
| subject keywords | band structure | |
| subject keywords | boron doping | |
| subject keywords | current-voltage characteristics | |
| subject keywords | den | |
| identifier doi | 10.1109/TNANO.2013.2279035 | |
| journal title | Nanotechnology, IEEE Transactions on | |
| journal volume | 13 | |
| journal issue | 1 | |
| filesize | 611275 | |
| citations | 4 |