| contributor author | بشرا قنبری شوهانی | en |
| contributor author | محمود رضائی رکن آبادی | en |
| contributor author | احمد کمپانی | en |
| contributor author | Boshra gh | fa |
| contributor author | Mahmood Rezaee Roknabadi | fa |
| contributor author | Ahmad Kompany | fa |
| date accessioned | 2020-06-06T13:38:41Z | |
| date available | 2020-06-06T13:38:41Z | |
| date issued | 2018 | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/3363271?show=full | |
| description abstract | The chemical stability of graphene and graphdiyne means that they can be stacked in different combinations to produce a new nanotransistor for ultra-high frequency applications. Here we report a resonant tunneling transistor through a graphene-graphdiyne-graphene heterojunctions sandwiched between two graphene electrodes. The characteristics of this transistor, which were modeled on the basis of density functional theory, revealed that the current is dominated by tunneling transitions. | en |
| language | English | |
| title | DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor | en |
| type | Journal Paper | |
| contenttype | External Fulltext | |
| subject keywords | Graphdiyne | en |
| subject keywords | Graphene | en |
| subject keywords | Heterojunction | en |
| subject keywords | Resonant tunneling transistor | en |
| subject keywords | DFT-NEGF | en |
| journal title | Computational Materials Science | en |
| journal title | Computational Materials Science | fa |
| pages | 280-284 | |
| journal volume | 144 | |
| journal issue | 0 | |
| identifier link | https://profdoc.um.ac.ir/paper-abstract-1066982.html | |
| identifier articleid | 1066982 | |
