DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor

Abstract

The chemical stability of graphene and graphdiyne means that they can be stacked in different combinations to produce a new nanotransistor for ultra-high frequency applications. Here we report a resonant tunneling transistor through a graphene-graphdiyne-graphene heterojunctions sandwiched between two graphene electrodes. The characteristics of this transistor, which were modeled on the basis of density functional theory, revealed that the current is dominated by tunneling transitions.