Show simple item record

BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

contributor authorJae Sung Sim
contributor authorIl Han Park
contributor authorSeongjae Cho
contributor authorTae Hun Kim
contributor authorKi Whan Song
contributor authorJihye Kong
contributor authorHyungcheol Shin
contributor authorJong Duk Lee
contributor authorByung-Gook Park
date accessioned2020-03-13T08:01:35Z
date available2020-03-13T08:01:35Z
date issued2005
identifier otherVGSMW9WPLnXfJAI4LpqXw0iXEsxYzv6xEuk6sK8NnGsYkWunYq.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1252376?show=full
formatgeneral
languageEnglish
titleBAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid9171210
identifier doi10.1109/.2005.1469237
journal titleDigest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.
coverageAcademic
filesize844074
citations1


Files in this item

Thumbnail
Name:
Fulltext.pdf
Size:
824.4Kb
Format:
PDF
Description:
Fulltext
View/Open

This item appears in the following Collection(s)

Show simple item record