BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism
نویسنده:
, , , , , , , ,سال
: 2005شناسه الکترونیک: 10.1109/.2005.1469237
کالکشن
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آمار بازدید
BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism
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contributor author | Jae Sung Sim | |
contributor author | Il Han Park | |
contributor author | Seongjae Cho | |
contributor author | Tae Hun Kim | |
contributor author | Ki Whan Song | |
contributor author | Jihye Kong | |
contributor author | Hyungcheol Shin | |
contributor author | Jong Duk Lee | |
contributor author | Byung-Gook Park | |
date accessioned | 2020-03-13T08:01:35Z | |
date available | 2020-03-13T08:01:35Z | |
date issued | 2005 | |
identifier other | VGSMW9WPLnXfJAI4LpqXw0iXEsxYzv6xEuk6sK8NnGsYkWunYq.pdf | |
identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1252376 | |
format | general | |
language | English | |
title | BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism | |
type | Journal Paper | |
contenttype | Fulltext | |
contenttype | Fulltext | |
identifier padid | 9171210 | |
identifier doi | 10.1109/.2005.1469237 | |
journal title | Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. | |
coverage | Academic | |
filesize | 844074 | |
citations | 1 |