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Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

contributor authorVirmontois, Cedric
contributor authorToulemont, Arthur
contributor authorRolland, G.
contributor authorMaterne, Alex
contributor authorLalucaa, Valerian
contributor authorGoiffon, Vincent
contributor authorCodreanu, Catalin
contributor authorDurnez, Clementine
contributor authorBardoux, Alain
date accessioned2020-03-13T00:31:10Z
date available2020-03-13T00:31:10Z
date issued2014
identifier issn0018-9499
identifier other6969835.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1149672?show=full
formatgeneral
languageEnglish
publisherIEEE
titleRadiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors
typeJournal Paper
contenttypeMetadata Only
identifier padid8332975
subject keywordsCMOS digital integrated circuits
subject keywordsCMOS image sensors
subject keywordsphotodiodes
subject keywordsproton effects
subject keywordsradiation hardening (electronics)
subject keywordsSrour universal damage factor
subject keywordsdark current
subject keywordsdigital CMOS image sensors
subject keywordsdigital CMOS imager
subject keywordsmain electrical parameter
subject keywordspinned photodiode
subject keywordsproton irradiations
subject keywordsradiation induced dose
subject keywordssingle event effects
subject keywordsActive pixel sensors
subject keywordsCMOS image sensors
subject keywordsDark current
subject keywordsIonizing radiation
subject keywordsPhotodiodes
subject keywordsRadiation effects
subject keywordsSilicon
subject keywordsSingle event transients
subject keywordsActive pixel sensor (APS)
subject keywordsCMOS i
identifier doi10.1109/TNS.2014.2369436
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue6
filesize1897106
citations0


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