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CMUTs with high-K atomic layer deposition dielectric material insulation layer

contributor authorXu, Tao
contributor authorTekes, Coskun
contributor authorDegertekin, F.
date accessioned2020-03-13T00:30:36Z
date available2020-03-13T00:30:36Z
date issued2014
identifier issn0885-3010
identifier other6968705.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1149350?show=full
formatgeneral
languageEnglish
publisherIEEE
titleCMUTs with high-K atomic layer deposition dielectric material insulation layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8332606
subject keywordsatomic layer deposition
subject keywordscapacitive sensors
subject keywordselectric breakdown
subject keywordshafnium compounds
subject keywordshigh-k dielectric thin films
subject keywordsinsulating materials
subject keywordsmicromachining
subject keywordsmicrosensors
subject keywordspermittivity
subject keywordsplasma CVD
subject keywordssilicon compounds
subject keywordsALD materials
subject keywordsCMUT design
subject keywordsHfO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsPECVD
subject keywordsSi<
subject keywordssub>
subject keywordsx<
subject keywords/sub>
subject keywordsN<
subject keywordssub>
subject keywordsy<
subject keywords/sub>
subject keywordscapacitive micromachined ultrasonic transducers
subject keywordscollapse voltage
subject keywordsdielectric constant
subject keywordselectrical breakdown strength
subject keywordsfrequency 16.5 MHz
subject keywordshigh-K atomic layer deposition di
identifier doi10.1109/TUFFC.2014.006481
journal titleUltrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
journal volume61
journal issue12
filesize5163345
citations0


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