Show simple item record

contributor authorChien-Hung Wu
contributor authorKow-Ming Chang
contributor authorHsin-Yu Hsu
date accessioned2020-03-13T00:29:04Z
date available2020-03-13T00:29:04Z
date issued2014
identifier issn0013-5194
identifier other6955131.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1148460?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIET
titleHigh-performance HfO<sub>2</sub>/ZrO<sub>2</sub>/IGZO thin-film transistors deposited using atmospheric pressure plasma jet
typeJournal Paper
contenttypeMetadata Only
identifier padid8331596
subject keywordshafnium compounds
subject keywordshigh-k dielectric thin films
subject keywordsplasma deposition
subject keywordsplasma jets
subject keywordssemiconductor thin films
subject keywordsthin film transistors
subject keywordszirconium compounds
subject keywordsAPPJ IGZO film
subject keywordsAPPJ deposition technology
subject keywordsAPPJ indium-gallium-zinc-oxide film
subject keywordsHfO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywords-ZrO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsIGZO-based transparent thin-film transistors
subject keywordsTFT
subject keywordsTOS film
subject keywordsatmospheric pressure plasma jet deposition technology
subject keywordschannel material
subject keywordsecofriendly water-based metal salt solution
subject keywordshigh-k dielectric HfO2-ZrO2 gate
identifier doi10.1049/el.2014.1823
journal titleElectronics Letters
journal volume50
journal issue23
filesize313353
citations0


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record