High-performance HfO<sub>2</sub>/ZrO<sub>2</sub>/IGZO thin-film transistors deposited using atmospheric pressure plasma jet
Publisher:
Year
: 2014DOI: 10.1049/el.2014.1823
Keyword(s): hafnium compounds,high-k dielectric thin films,plasma deposition,plasma jets,semiconductor thin films,thin film transistors,zirconium compounds,APPJ IGZO film,APPJ deposition technology,APPJ indium-gallium-zinc-oxide film,HfO<,sub>,2<,/sub>,-ZrO<,sub>,2<,/sub>,IGZO-based transparent thin-film transistors,TFT,TOS film,atmospheric pressure plasma jet deposition technology,channel material,ecofriendly water-based metal salt solution,high-k dielectric HfO2-ZrO2 gate
Collections
:
-
Statistics
High-performance HfO<sub>2</sub>/ZrO<sub>2</sub>/IGZO thin-film transistors deposited using atmospheric pressure plasma jet
Show full item record
| contributor author | Chien-Hung Wu | |
| contributor author | Kow-Ming Chang | |
| contributor author | Hsin-Yu Hsu | |
| date accessioned | 2020-03-13T00:29:04Z | |
| date available | 2020-03-13T00:29:04Z | |
| date issued | 2014 | |
| identifier issn | 0013-5194 | |
| identifier other | 6955131.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1148460?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IET | |
| title | High-performance HfO<sub>2</sub>/ZrO<sub>2</sub>/IGZO thin-film transistors deposited using atmospheric pressure plasma jet | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8331596 | |
| subject keywords | hafnium compounds | |
| subject keywords | high-k dielectric thin films | |
| subject keywords | plasma deposition | |
| subject keywords | plasma jets | |
| subject keywords | semiconductor thin films | |
| subject keywords | thin film transistors | |
| subject keywords | zirconium compounds | |
| subject keywords | APPJ IGZO film | |
| subject keywords | APPJ deposition technology | |
| subject keywords | APPJ indium-gallium-zinc-oxide film | |
| subject keywords | HfO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | -ZrO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | IGZO-based transparent thin-film transistors | |
| subject keywords | TFT | |
| subject keywords | TOS film | |
| subject keywords | atmospheric pressure plasma jet deposition technology | |
| subject keywords | channel material | |
| subject keywords | ecofriendly water-based metal salt solution | |
| subject keywords | high-k dielectric HfO2-ZrO2 gate | |
| identifier doi | 10.1049/el.2014.1823 | |
| journal title | Electronics Letters | |
| journal volume | 50 | |
| journal issue | 23 | |
| filesize | 313353 | |
| citations | 0 |