Correlation of threading screw dislocation density to GaN 2-DEG mobility
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Year
: 2014DOI: 10.1049/el.2014.2401
Keyword(s): Hall effect,III-V semiconductors,aluminium compounds,channelling,dislocation density,electron mobility,gallium compounds,high electron mobility transistors,screw dislocations,two-dimensional electron gas,wide band gap semiconductors,2-DEG mobility,AlGaN-GaN,ECCI,HEMT,Hall effect test structures,electron channelling contrast imaging,high electron mobility transistors,threading screw dislocation density,two-dimensional electron gas
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Correlation of threading screw dislocation density to GaN 2-DEG mobility
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| contributor author | Hite, Jennifer K. | |
| contributor author | Gaddipati, P. | |
| contributor author | Meyer, D.J. | |
| contributor author | Mastro, Michael /A/. | |
| contributor author | Eddy, Charles R. | |
| date accessioned | 2020-03-13T00:29:00Z | |
| date available | 2020-03-13T00:29:00Z | |
| date issued | 2014 | |
| identifier issn | 0013-5194 | |
| identifier other | 6955024.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1148416 | |
| format | general | |
| language | English | |
| publisher | IET | |
| title | Correlation of threading screw dislocation density to GaN 2-DEG mobility | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8331541 | |
| subject keywords | Hall effect | |
| subject keywords | III-V semiconductors | |
| subject keywords | aluminium compounds | |
| subject keywords | channelling | |
| subject keywords | dislocation density | |
| subject keywords | electron mobility | |
| subject keywords | gallium compounds | |
| subject keywords | high electron mobility transistors | |
| subject keywords | screw dislocations | |
| subject keywords | two-dimensional electron gas | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | 2-DEG mobility | |
| subject keywords | AlGaN-GaN | |
| subject keywords | ECCI | |
| subject keywords | HEMT | |
| subject keywords | Hall effect test structures | |
| subject keywords | electron channelling contrast imaging | |
| subject keywords | high electron mobility transistors | |
| subject keywords | threading screw dislocation density | |
| subject keywords | two-dimensional electron gas | |
| identifier doi | 10.1049/el.2014.2401 | |
| journal title | Electronics Letters | |
| journal volume | 50 | |
| journal issue | 23 | |
| filesize | 247090 | |
| citations | 1 |