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Correlation of threading screw dislocation density to GaN 2-DEG mobility

contributor authorHite, Jennifer K.
contributor authorGaddipati, P.
contributor authorMeyer, D.J.
contributor authorMastro, Michael /A/.
contributor authorEddy, Charles R.
date accessioned2020-03-13T00:29:00Z
date available2020-03-13T00:29:00Z
date issued2014
identifier issn0013-5194
identifier other6955024.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1148416?show=full
formatgeneral
languageEnglish
publisherIET
titleCorrelation of threading screw dislocation density to GaN 2-DEG mobility
typeJournal Paper
contenttypeMetadata Only
identifier padid8331541
subject keywordsHall effect
subject keywordsIII-V semiconductors
subject keywordsaluminium compounds
subject keywordschannelling
subject keywordsdislocation density
subject keywordselectron mobility
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordsscrew dislocations
subject keywordstwo-dimensional electron gas
subject keywordswide band gap semiconductors
subject keywords2-DEG mobility
subject keywordsAlGaN-GaN
subject keywordsECCI
subject keywordsHEMT
subject keywordsHall effect test structures
subject keywordselectron channelling contrast imaging
subject keywordshigh electron mobility transistors
subject keywordsthreading screw dislocation density
subject keywordstwo-dimensional electron gas
identifier doi10.1049/el.2014.2401
journal titleElectronics Letters
journal volume50
journal issue23
filesize247090
citations1


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