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Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

contributor authorMahalanabis, Debayan
contributor authorBarnaby, H.J.
contributor authorKozicki, M.N.
contributor authorBharadwaj, Vineeth
contributor authorRajabi, Saba
date accessioned2020-03-13T00:27:04Z
date available2020-03-13T00:27:04Z
date issued2014
identifier issn0018-9499
identifier other6935043.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1147225?show=full
formatgeneral
languageEnglish
publisherIEEE
titleInvestigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory
typeJournal Paper
contenttypeMetadata Only
identifier padid8330162
subject keywordsradiation hardening (electronics)
subject keywordsresistive RAM
subject keywordsPMC resistance
subject keywordsintegrated 1T-1R PMC memory array
subject keywordsion strike
subject keywordsionizing radiation
subject keywordslinear energy transfer
subject keywordsnonvolatile ionic resistive memory device
subject keywordsprogrammable metallization cell memory
subject keywordssingle event induced soft error
subject keywordssingle event transients
subject keywordssingle event upsets
subject keywordsIntegrated circuit metallization
subject keywordsIntegrated circuit modeling
subject keywordsRandom access memory
subject keywordsResistance
subject keywordsSingle event transients
subject keywordsSingle event upsets
subject keywordsTransient analysis
subject keywordsChalcogenide
subject keywordselec
identifier doi10.1109/TNS.2014.2358235
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue6
filesize942647
citations0


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