Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory
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سال
: 2014شناسه الکترونیک: 10.1109/TNS.2014.2358235
کلیدواژه(گان): radiation hardening (electronics),resistive RAM,PMC resistance,integrated 1T-1R PMC memory array,ion strike,ionizing radiation,linear energy transfer,nonvolatile ionic resistive memory device,programmable metallization cell memory,single event induced soft error,single event transients,single event upsets,Integrated circuit metallization,Integrated circuit modeling,Random access memory,Resistance,Single event transients,Single event upsets,Transient analysis,Chalcogenide,elec
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آمار بازدید
Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory
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| contributor author | Mahalanabis, Debayan | |
| contributor author | Barnaby, H.J. | |
| contributor author | Kozicki, M.N. | |
| contributor author | Bharadwaj, Vineeth | |
| contributor author | Rajabi, Saba | |
| date accessioned | 2020-03-13T00:27:04Z | |
| date available | 2020-03-13T00:27:04Z | |
| date issued | 2014 | |
| identifier issn | 0018-9499 | |
| identifier other | 6935043.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1147225 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8330162 | |
| subject keywords | radiation hardening (electronics) | |
| subject keywords | resistive RAM | |
| subject keywords | PMC resistance | |
| subject keywords | integrated 1T-1R PMC memory array | |
| subject keywords | ion strike | |
| subject keywords | ionizing radiation | |
| subject keywords | linear energy transfer | |
| subject keywords | nonvolatile ionic resistive memory device | |
| subject keywords | programmable metallization cell memory | |
| subject keywords | single event induced soft error | |
| subject keywords | single event transients | |
| subject keywords | single event upsets | |
| subject keywords | Integrated circuit metallization | |
| subject keywords | Integrated circuit modeling | |
| subject keywords | Random access memory | |
| subject keywords | Resistance | |
| subject keywords | Single event transients | |
| subject keywords | Single event upsets | |
| subject keywords | Transient analysis | |
| subject keywords | Chalcogenide | |
| subject keywords | elec | |
| identifier doi | 10.1109/TNS.2014.2358235 | |
| journal title | Nuclear Science, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 6 | |
| filesize | 942647 | |
| citations | 0 |