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Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages

contributor authorJian Zhang
contributor authorDe Marchi, Michele
contributor authorSacchetto, Davide
contributor authorGaillardon, Pierre-Emmanuel
contributor authorLeblebici, Yusuf
contributor authorDe Micheli, G.
date accessioned2020-03-13T00:24:47Z
date available2020-03-13T00:24:47Z
date issued2014
identifier issn0018-9383
identifier other6915729.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1145798?show=full
formatgeneral
languageEnglish
publisherIEEE
titlePolarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages
typeJournal Paper
contenttypeMetadata Only
identifier padid8328564
subject keywordselemental semiconductors
subject keywordsfield effect transistors
subject keywordsleakage currents
subject keywordsnanoelectronics
subject keywordsnanowires
subject keywordssilicon
subject keywordsvoltage control
subject keywordsGAA electrodes
subject keywordsdual threshold voltages
subject keywordsdynamic configurability
subject keywordsgate-all-around silicon nanowires
subject keywordsleakage control
subject keywordsleakage current
subject keywordspolarity-controllable silicon nanowire transistors
subject keywordsthreshold voltage control
subject keywordsthreshold voltage modulation
subject keywordsInverters
subject keywordsLogic gates
subject keywordsPerformance evaluation
subject keywordsSchottky barriers
subject keywordsSilicon
subject keywordsThreshold voltage
subject keywordsTunneling
subject keywordsPolarity
subject keywordsSchottky barrier
identifier doi10.1109/TED.2014.2359112
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue11
filesize2236943
citations0


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