Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2359112
کلیدواژه(گان): elemental semiconductors,field effect transistors,leakage currents,nanoelectronics,nanowires,silicon,voltage control,GAA electrodes,dual threshold voltages,dynamic configurability,gate-all-around silicon nanowires,leakage control,leakage current,polarity-controllable silicon nanowire transistors,threshold voltage control,threshold voltage modulation,Inverters,Logic gates,Performance evaluation,Schottky barriers,Silicon,Threshold voltage,Tunneling,Polarity,Schottky barrier
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Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages
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| contributor author | Jian Zhang | |
| contributor author | De Marchi, Michele | |
| contributor author | Sacchetto, Davide | |
| contributor author | Gaillardon, Pierre-Emmanuel | |
| contributor author | Leblebici, Yusuf | |
| contributor author | De Micheli, G. | |
| date accessioned | 2020-03-13T00:24:47Z | |
| date available | 2020-03-13T00:24:47Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6915729.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1145798 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Polarity-Controllable Silicon Nanowire Transistors With Dual Threshold Voltages | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8328564 | |
| subject keywords | elemental semiconductors | |
| subject keywords | field effect transistors | |
| subject keywords | leakage currents | |
| subject keywords | nanoelectronics | |
| subject keywords | nanowires | |
| subject keywords | silicon | |
| subject keywords | voltage control | |
| subject keywords | GAA electrodes | |
| subject keywords | dual threshold voltages | |
| subject keywords | dynamic configurability | |
| subject keywords | gate-all-around silicon nanowires | |
| subject keywords | leakage control | |
| subject keywords | leakage current | |
| subject keywords | polarity-controllable silicon nanowire transistors | |
| subject keywords | threshold voltage control | |
| subject keywords | threshold voltage modulation | |
| subject keywords | Inverters | |
| subject keywords | Logic gates | |
| subject keywords | Performance evaluation | |
| subject keywords | Schottky barriers | |
| subject keywords | Silicon | |
| subject keywords | Threshold voltage | |
| subject keywords | Tunneling | |
| subject keywords | Polarity | |
| subject keywords | Schottky barrier | |
| identifier doi | 10.1109/TED.2014.2359112 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 11 | |
| filesize | 2236943 | |
| citations | 0 |