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Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs

contributor authorHagyoul Bae
contributor authorHyojoon Seo
contributor authorSungwoo Jun
contributor authorHyunjun Choi
contributor authorJaeyeop Ahn
contributor authorJunseok Hwang
contributor authorJungmin Lee
contributor authorOh, Sung-Min
contributor authorJong-Uk Bae
contributor authorSung-Jin Choi
contributor authorDae Hwan Kim
contributor authorDong Myong Kim
date accessioned2020-03-13T00:20:59Z
date available2020-03-13T00:20:59Z
date issued2014
identifier issn0018-9383
identifier other6891249.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1143423?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleFully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs
typeJournal Paper
contenttypeMetadata Only
identifier padid8326040
subject keywordsamorphous semiconductors
subject keywordsgallium compounds
subject keywordsindium compounds
subject keywordslocalised states
subject keywordsthin film transistors
subject keywordswide band gap semiconductors
subject keywordszinc compounds
subject keywordsInGaZnO
subject keywordsamorphous semiconductor TFTs
subject keywordsdark photonic excitation condition
subject keywordsenergy distribution
subject keywordsfully current-based sub-bandgap optoelectronic differential ideality factor technique
subject keywordsgate bias-dependent differential change
subject keywordsintrinsic density-of-state extraction
subject keywordslocalized states
subject keywordssub-bandgap photonic excitation condition
subject keywordssubgap DOS extraction
subject keywordsthi
identifier doi10.1109/TED.2014.2348592
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue10
filesize1078008
citations0


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