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Reverse Electrical Behavior of N-Channel and P-Channel LTPS-TFTs by N<sub>2</sub>O Plasma Surface Treatment

contributor authorMa, W.C.-Y.
contributor authorChi-Yuan Huang
contributor authorTsung-Chieh Chan
contributor authorSheng-Wei Yuan
date accessioned2020-03-13T00:11:54Z
date available2020-03-13T00:11:54Z
date issued2014
identifier issn0093-3813
identifier other6847221.pdf
identifier urihttps://libsearch.um.ac.ir:443/fum/handle/fum/1137903?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleReverse Electrical Behavior of N-Channel and P-Channel LTPS-TFTs by N<sub>2</sub>O Plasma Surface Treatment
typeJournal Paper
contenttypeMetadata Only
identifier padid8319889
subject keywordselemental semiconductors
subject keywordsnitrogen compounds
subject keywordspassivation
subject keywordsplasma materials processing
subject keywordssilicon
subject keywordsthin film transistors
subject keywords3D integrated circuit
subject keywordsHfO2 gate dielectric
subject keywordsHfO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsN2O plasma surface treatment
subject keywordsN<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsO
subject keywordsPIL growth effect
subject keywordsPIL removal step
subject keywordsSi
subject keywordsn-channel LTPS-TFT
subject keywordsp-channel LTPS-TFT
subject keywordsp-channel low-temperature poly-Si thin-film transistors
subject keywordsplasma induced interfacial layer growth effect
subject keywordssystem-on-panel
subject keywordstrap passivation effect
subject keywordsDielectrics
subject keywordsLogic g
identifier doi10.1109/TPS.2014.2332187
journal titlePlasma Science, IEEE Transactions on
journal volume42
journal issue12
filesize1807839
citations0


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