Reverse Electrical Behavior of N-Channel and P-Channel LTPS-TFTs by N<sub>2</sub>O Plasma Surface Treatment
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: 2014DOI: 10.1109/TPS.2014.2332187
Keyword(s): elemental semiconductors,nitrogen compounds,passivation,plasma materials processing,silicon,thin film transistors,3D integrated circuit,HfO2 gate dielectric,HfO<,sub>,2<,/sub>,N2O plasma surface treatment,N<,sub>,2<,/sub>,O,PIL growth effect,PIL removal step,Si,n-channel LTPS-TFT,p-channel LTPS-TFT,p-channel low-temperature poly-Si thin-film transistors,plasma induced interfacial layer growth effect,system-on-panel,trap passivation effect,Dielectrics,Logic g
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Reverse Electrical Behavior of N-Channel and P-Channel LTPS-TFTs by N<sub>2</sub>O Plasma Surface Treatment
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| contributor author | Ma, W.C.-Y. | |
| contributor author | Chi-Yuan Huang | |
| contributor author | Tsung-Chieh Chan | |
| contributor author | Sheng-Wei Yuan | |
| date accessioned | 2020-03-13T00:11:54Z | |
| date available | 2020-03-13T00:11:54Z | |
| date issued | 2014 | |
| identifier issn | 0093-3813 | |
| identifier other | 6847221.pdf | |
| identifier uri | https://libsearch.um.ac.ir:443/fum/handle/fum/1137903?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Reverse Electrical Behavior of N-Channel and P-Channel LTPS-TFTs by N<sub>2</sub>O Plasma Surface Treatment | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8319889 | |
| subject keywords | elemental semiconductors | |
| subject keywords | nitrogen compounds | |
| subject keywords | passivation | |
| subject keywords | plasma materials processing | |
| subject keywords | silicon | |
| subject keywords | thin film transistors | |
| subject keywords | 3D integrated circuit | |
| subject keywords | HfO2 gate dielectric | |
| subject keywords | HfO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | N2O plasma surface treatment | |
| subject keywords | N< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O | |
| subject keywords | PIL growth effect | |
| subject keywords | PIL removal step | |
| subject keywords | Si | |
| subject keywords | n-channel LTPS-TFT | |
| subject keywords | p-channel LTPS-TFT | |
| subject keywords | p-channel low-temperature poly-Si thin-film transistors | |
| subject keywords | plasma induced interfacial layer growth effect | |
| subject keywords | system-on-panel | |
| subject keywords | trap passivation effect | |
| subject keywords | Dielectrics | |
| subject keywords | Logic g | |
| identifier doi | 10.1109/TPS.2014.2332187 | |
| journal title | Plasma Science, IEEE Transactions on | |
| journal volume | 42 | |
| journal issue | 12 | |
| filesize | 1807839 | |
| citations | 0 |